Prof Sir Colin Humphreys
CBE, FREng, FRS, BSc, MA, PhD, Hon DSc, FIMMM, FInstP, FCGI, Hon FRMS
All Publications
Page 6 of 10
2006
- Moram MA, Barber ZH, Humphreys CJ, Joyce TB and Chalker PR (2006). Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon. Journal of Applied Physics, Aip Publishing vol. 100 (2)
15-07-2006 - Oliver RA, Kappers MJ and Humphreys CJ (2006). Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopy. Applied Physics Letters, Aip Publishing vol. 89 (1)
03-07-2006 - Moldovan G, Roe MJ, Harrison I, Kappers M, Humphreys CJ and Brown PD (2006). Effects of KOH etching on the properties of Ga-polar n-GaN surfaces. The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 86 (16), 2315-2327.
01-06-2006 - Kazemian P, Twitchett AC, Humphreys CJ and Rodenburg C (2006). Site-specific dopant profiling in a scanning electron microscope using focused ion beam prepared specimens. Applied Physics Letters, Aip Publishing vol. 88 (21)
22-05-2006 - Zhu D, Kappers MJ, Costa PMFJ, McAleese C, Rayment FDG, Chabrol GR, Graham DM, Dawson P, Thrush EJ, Mullins JT and Humphreys CJ (2006). A comparative study of near‐UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers. Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 203 (7), 1819-1823.
01-05-2006 - Jarjour AF, Green AM, Parker TJ, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Martin RW and Watson IM (2006). Two-photon absorption from single InGaN/GaN quantum dots. Physica E Low-Dimensional Systems and Nanostructures, Elsevier vol. 32 (1-2), 119-122.
01-05-2006 - Oliver RA, Kappers MJ, Sumner J, Datta R and Humphreys CJ (2006). Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3. Journal of Crystal Growth, Elsevier vol. 289 (2), 506-514.
01-04-2006 - Xiu H, Costa PM, Kauer M, Smeeton TM, Hooper SE, Heffernan J and Humphreys CJ (2006). Study of Defects in p-type Layers in III-nitride Laser Diode Structures Grown by Molecular Beam Epitaxy. Mrs Advances, Springer Nature vol. 955
01-01-2006
2005
- Martinez CE, Stanton NM, Kent AJ, Graham DM, Dawson P, Kappers MJ and Humphreys CJ (2005). Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells. Journal of Applied Physics, Aip Publishing vol. 98 (5)
01-09-2005 - Robinson JW, Rice JH, Lee KH, Na JH, Taylor RA, Hasko DG, Oliver RA, Kappers MJ, Humphreys CJ and Briggs GAD (2005). Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field. Applied Physics Letters, Aip Publishing vol. 86 (21)
16-05-2005 - Humphreys C (2005). Science and the Miracles of Exodus. Europhysics News, Edp Sciences vol. 36 (3), 93-96.
01-05-2005 - Graham DM, Soltani-Vala A, Dawson P, Godfrey MJ, Smeeton TM, Barnard JS, Kappers MJ, Humphreys CJ and Thrush EJ (2005). Optical and microstructural studies of InGaN∕GaN single-quantum-well structures. Journal of Applied Physics, Aip Publishing vol. 97 (10)
29-04-2005 - Cherns PD, McAleese C, Barnard JS, Kappers MJ and Humphreys CJ (2005). A TEM Investigation of Crack Reduction in AlGaN/GaN Heterostructures Using an AlN Interlayer. Mrs Advances, Springer Nature vol. 892 (1)
01-01-2005 - Ofori AP, Rossouw CJ and Humphreys CJ (2005). Determining the site occupancy of Ru in the L12 phase of a Ni-base superalloy using ALCHEMI. Acta Materialia, Elsevier vol. 53 (1), 97-110.
01-01-2005 - Moram MA, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2005). Microstructure and Strain-Free Lattice Parameters of SCxGa1-xN Films. Mrs Advances, Springer Nature vol. 892 (1)
01-01-2005 - Costa PM, Datta R, Kappers MJ, Vickers ME and Humphreys CJ (2005). Misfit dislocations in green-emitting InGaN/GaN quantum well structures. Mrs Advances, Springer Nature vol. 892
01-01-2005 - van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ (2005). Quantum Well Network Structures: Investigating Long-range Thickness Fluctuations in Single InGaN/GaN Quantum Wells. Mrs Advances, Springer Nature vol. 892 (1)
01-01-2005 - Oliver RA, Kappers MJ, Sumner J, Datta R and Humphreys CJ (2005). SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations. Mrs Advances, Springer Nature vol. 892 (1)
01-01-2005 - Wong ASW, Ho GW, Dunin-Borkowski RE, Kasama T, Oliver RA, Costa PM and Humphreys CJ (2005). The mean inner potential of GaN measured from nanowires using off-axis electron holography. Mrs Advances, Springer Nature vol. 892
01-01-2005
2004
- Oliver RA, Kappers MJ, Humphreys CJ and Briggs GAD (2004). Growth modes in heteroepitaxy of InGaN on GaN. Journal of Applied Physics, Aip Publishing vol. 97 (1)
16-12-2004 - Chryssou CE, Kenyon AJ, Smeeton TM, Humphreys CJ and Hole DE (2004). Broadband sensitization of 1.53μm Er3+ luminescence in erbium-implanted alumina. Applied Physics Letters, Aip Publishing vol. 85 (22), 5200-5202.
29-11-2004 - Datta R, Kappers MJ, Barnard JS and Humphreys CJ (2004). Revealing all types of threading dislocations in GaN with improved contrast in a single plan view image. Applied Physics Letters, Aip Publishing vol. 85 (16), 3411-3413.
18-10-2004 - Rice JH, Robinson JW, Smith JD, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Yasin S and Humphreys CJ (2004). Photoluminescence Studies of Exciton Recombination and Dephasing in Single Ingan Quantum Dots. Ieee Transactions On Nanotechnology, Institute of Electrical and Electronics Engineers (Ieee) vol. 3 (3), 343-347.
01-09-2004 - Rice JH, Robinson JW, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ and Humphreys CJ (2004). Temporal variation in photoluminescence from single InGaN quantum dots. Applied Physics Letters, Aip Publishing vol. 84 (20), 4110-4112.
17-05-2004 - Moldovan G, Harrison I, Humphreys CJ, Kappers M and Brown PD (2004). Application of the Taguchi method for assessment of surface treatment procedures for Ti/n-type GaN contacts. Materials Science and Technology, Sage Publications vol. 20 (4), 533-538.
01-04-2004 - Humphreys C (2004). Can a Materials Scientist Move Mount Sinai? Mrs Bulletin, Springer Nature vol. 29 (4), 222-223.
01-04-2004 - Kaestner B, Schönjahn C and Humphreys CJ (2004). Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope. Applied Physics Letters, Aip Publishing vol. 84 (12), 2109-2111.
22-03-2004 - Campbell LC, Wilkinson MJ, Manz A, Camilleri P and Humphreys CJ (2004). Electrophoretic manipulation of single DNA molecules in nanofabricated capillaries. Lab On a Chip, Royal Society of Chemistry (Rsc) vol. 4 (3), 225-229.
01-01-2004 - Charles MB, Kappers MJ and Humphreys CJ (2004). Growth of Uncracked Al0.80Ga0.20N/GaN DBR on Si(111). Mrs Advances, Springer Nature vol. 831 (1), 377-381.
01-01-2004 - Chen GS, Chen G-S, Hsiao HH, Louh RF and Humphreys CJ (2004). Improving Thermal Stability of LiMn2 O 4 Thin Films by In Situ Coating of α MnO2 Using High-Pressure and High-Temperature Sputtering. Electrochemical and Solid-State Letters, The Electrochemical Society vol. 7 (8), a235-a238.
01-01-2004 - Datta R, Kappers MJ, Barnard JS and Humphreys CJ (2004). Reduction of Threading Dislocations in GaN grown on ‘c’ plane sapphire by MOVPE. Mrs Advances, Springer Nature vol. 831
01-01-2004
2003
- Smeeton TM, Kappers MJ, Barnard JS, Vickers ME and Humphreys CJ (2003). Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope. Applied Physics Letters, Aip Publishing vol. 83 (26), 5419-5421.
29-12-2003 - Belyaev AE, Foxon CT, Novikov SV, Makarovsky O, Eaves L, Kappers MJ and Humphreys CJ (2003). Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]. Applied Physics Letters, Aip Publishing vol. 83 (17), 3626-3627.
27-10-2003 - Robinson JW, Rice JH, Jarjour A, Smith JD, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ and Arakawa Y (2003). Time-resolved dynamics in single InGaN quantum dots. Applied Physics Letters, Aip Publishing vol. 83 (13), 2674-2676.
29-09-2003 - Novikov SV, Zhao LX, Winser AJ, Kappers MJ, Barnard JS, Harrison I, Humphreys CJ and Foxon CT (2003). Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates. Journal of Crystal Growth, Elsevier vol. 256 (3-4), 237-242.
01-09-2003 - Vickers ME, Kappers MJ, Smeeton TM, Thrush EJ, Barnard JS and Humphreys CJ (2003). Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering. Journal of Applied Physics, Aip Publishing vol. 94 (3), 1565-1574.
01-08-2003 - Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Yasin S, Rice JH, Smith JD and Taylor RA (2003). InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal. Applied Physics Letters, Aip Publishing vol. 83 (4), 755-757.
28-07-2003 - Schönjahn C, Broom RF, Humphreys CJ, Howie A and Mentink SAM (2003). Optimizing and quantifying dopant mapping using a scanning electron microscope with a through-the-lens detector. Applied Physics Letters, Aip Publishing vol. 83 (2), 293-295.
14-07-2003 - Mavroidis C, Harris JJ, Kappers MJ, Humphreys CJ and Bougrioua Z (2003). Detailed interpretation of electron transport in n-GaN. Journal of Applied Physics, Aip Publishing vol. 93 (11), 9095-9103.
01-06-2003 - Pope IA, Smowton PM, Blood P, Thomson JD, Kappers MJ and Humphreys CJ (2003). Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm. Applied Physics Letters, Aip Publishing vol. 82 (17), 2755-2757.
28-04-2003
2002
- Schönjahn C, Humphreys CJ and Glick M (2002). Energy-filtered imaging in a field-emission scanning electron microscope for dopant mapping in semiconductors. Journal of Applied Physics, Aip Publishing vol. 92 (12), 7667-7671.
15-12-2002 - Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH and Yu PW (2002). Response to “Comment on ‘Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells’ ” [Appl. Phys. Lett. 81, 3100 (2002)]. Applied Physics Letters, Aip Publishing vol. 81 (16), 3102-3103.
14-10-2002 - Keast VJ, Scott AJ, Kappers MJ, Foxon CT and Humphreys CJ (2002). Electronic structure of GaN and InxGa1-xN measured with electron energy-loss spectroscopy. Physical Review B, American Physical Society (Aps) vol. 66 (12)
15-09-2002 - Elliott SL, Broom RF and Humphreys CJ (2002). Dopant profiling with the scanning electron microscope—A study of Si. Journal of Applied Physics, Aip Publishing vol. 91 (11), 9116-9122.
01-06-2002 - Chen GS, Lee PY, Boothroyd CB and Humphreys CJ (2002). Crystallization transformations in vacuum-deposited amorphous aluminum fluoride self-developing thin-film resists induced by electron-beam irradiation. Journal of Vacuum Science & Technology a Vacuum Surfaces and Films, American Vacuum Society vol. 20 (3), 986-990.
01-05-2002 - Thomas SM and Humphreys C (2002). Colin Humphreys - A practical physicist having fun in the world of materials. Materials World vol. 10 (1), 11-11.
01-01-2002 - Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N and Humphreys CJ (2002). Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms. Journal of Applied Physics, Aip Publishing vol. 91 (1), 367-374.
01-01-2002
2001
- Bright AN, Sharma N and Humphreys CJ (2001). Analysis of contacts and V‐defects in GaN device structures by transmission electron microscopy. Microscopy, Oxford University Press (Oup) vol. 50 (6), 489-495.
01-11-2001 - Bright AN and Humphreys CJ (2001). Identification of interfacial layers in Ohmic contacts to n-type GaN and AlxGa1-xN/GaN heterostructures using high-resolution electron microscopy. Philosophical Magazine B, Taylor & Francis vol. 81 (11), 1725-1744.
01-11-2001 - Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH and Yu PW (2001). Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells. Applied Physics Letters, Aip Publishing vol. 79 (16), 2594-2596.
15-10-2001