Prof Sir Colin Humphreys
CBE, FREng, FRS, BSc, MA, PhD, Hon DSc, FIMMM, FInstP, FCGI, Hon FRMS

 

All Publications

Page 7 of 10

    2001

    • Cho HK, Lee JY, Kim CS, Yang GM, Sharma N and Humphreys C (2001). Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition. Journal of Crystal Growth, Elsevier vol. 231 (4), 466-473.  
      01-10-2001
    • Sharma N, Tricker D, Thomas P, Bougrioua Z, Jacobs K, Cheyns J, Moerman I, Thrush T, Considine L, Boyd A and Humphreys C (2001). Chemical mapping of InGaN MQWs. Journal of Crystal Growth, Elsevier vol. 230 (3-4), 438-441.  
      01-09-2001
    • Bougrioua Z, Moerman I, Sharma N, Wallis RH, Cheyns J, Jacobs K, Thrush EJ, Considine L, Beanland R, Farvacque J-L and Humphreys C (2001). Material optimisation for AlGaN/GaN HFET applications. Journal of Crystal Growth, Elsevier vol. 230 (3-4), 573-578.  
      01-09-2001
    • Mavroidis C, Harris JJ, Kappers MJ, Sharma N, Humphreys CJ and Thrush EJ (2001). Observation of thermally activated conduction at a GaN–sapphire interface. Applied Physics Letters, Aip Publishing vol. 79 (8), 1121-1123.  
      20-08-2001
    • Keast VJ, Sharma N, Kappers M and Humphreys CJ (2001). Electron Energy Loss Spectroscopy (EELS) of GaN Alloys and Quantum Wells. Microscopy and Microanalysis, Oxford University Press (Oup) vol. 7 (S2), 1182-1183.  
      01-08-2001
    • Thomas MDR, Ahmed H, Sanderson KM, Shephard DS, Johnson BFG, Ozkaya D, Sharma N and Humphreys C (2001). Effects of electron-beam exposure on a ruthenium nanocluster polymer. Journal of Applied Physics, Aip Publishing vol. 90 (2), 947-952.  
      15-07-2001
    • Pankhurst DA, Botton GA and Humphreys CJ (2001). Local symmetry and bonding effects on electron energy-loss near-edge structures: Ab initio study of an NiAl grain boundary. Physical Review B, American Physical Society (Aps) vol. 63 (20) 
      08-05-2001
    • Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N and Humphreys CJ (2001). Broad-band and flashlamp pumping of 1.53 μm emission from erbium-doped silicon nanocrystals. Materials Science and Engineering B, Elsevier vol. 81 (1-3), 19-22.  
      01-04-2001
    • Bright AN, Thomas PJ, Weyland M, Tricker DM, Humphreys CJ and Davies R (2001). Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy. Journal of Applied Physics, Aip Publishing vol. 89 (6), 3143-3150.  
      15-03-2001
    • Bright AN, Tricker DM, Humphreys CJ and Davies R (2001). A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN. Journal of Electronic Materials, Springer Nature vol. 30 (3), l13-l16.  
      01-03-2001
    • Sharma N, Cho HK, Lee JY and Humphreys CJ (2001). Chemical mapping of indium rich quantum dots in InGaN/GaN quantum wells. Mrs Advances, Springer Nature vol. 667 
      01-01-2001
    • Tatsuoka H, koga T, Matsuda K, Nose Y, Souno Y, Kuwabara H, Brown PD and Humphreys CJ (2001). Microstructure of semiconducting MnSi1.7 and β-FeSi2 layers grown by surfactant-mediated reactive deposition epitaxy. Thin Solid Films, Elsevier vol. 381 (2), 231-235.  
      01-01-2001

    2000

    • Saifullah MSM, Kurihara K and Humphreys CJ (2000). Comparative study of sputtered and spin-coatable aluminum oxide electron beam resists. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 18 (6), 2737-2744.  
      01-11-2000
    • Botton GA, Nishino Y and Humphreys CJ (2000). Microstructural evolution and stability of (Fe1−xVx)3Al alloys in relation to the electronic structure. Intermetallics, Elsevier vol. 8 (9-11), 1209-1214.  
      01-09-2000
    • Sharma N, Thomas P, Tricker D and Humphreys C (2000). Chemical mapping and formation of V-defects in InGaN multiple quantum wells. Applied Physics Letters, Aip Publishing vol. 77 (9), 1274-1276.  
      28-08-2000
    • Pekarskaya E, Botton GA, Jones CN and Humphreys CJ (2000). The effect of annealing on the microstructure and tensile properties of a β/γ′ Ni–Al–Fe alloy. Intermetallics, Elsevier vol. 8 (8), 903-913.  
      01-08-2000
    • Pankhurst DA, Botton GA and Humphreys CJ (2000). The Effect of Local Symmetry on Atomic Resolution EELS Near-Edge Structures: Predictions for Grain Boundaries In NiAl. Microscopy and Microanalysis, Oxford University Press (Oup) vol. 6 (S2), 186-187.  
      01-08-2000
    • Humphreys C (2000). Facing up to the future of materials science and technology. Materials World vol. 8 (4), 11-13.  
      01-01-2000
    • Humphreys C (2000). Oxbridge and the public schools. Materials World vol. 8 (1), 2-3.  
      01-01-2000
    • Humphreys C (2000). THE NUMBERS IN THE EXODUS FROM EGYPT: A FURTHER APPRAISAL. Vetus Testamentum, Brill Academic Publishers vol. 50 (3), 323-328.  
      01-01-2000

    1999

    • Saifullah MSM, Botton GA, Boothroyd CB and Humphreys CJ (1999). Electron energy loss spectroscopy studies of the amorphous to crystalline transition in FeF3. Journal of Applied Physics, Aip Publishing vol. 86 (5), 2499-2504.  
      01-09-1999
    • Humphreys CJ (1999). Electrons seen in orbit. Nature, Springer Nature vol. 401 (6748), 21-22.  
      01-09-1999
    • Kaiser U, Khodos I, Brown PD, Chuvilin A, Albrecht M, Humphreys CJ, Fissel A and Richter W (1999). A transmission electron microscopy investigation of SiC films grown on SiC substrates by solid-source molecular beam epitaxy. Journal of Materials Research, Springer Nature vol. 14 (8), 3226-3236.  
      01-08-1999
    • Weyher JL, Brown PD, Zauner ARA, Müller S, Boothroyd CB, Foord DT, Hageman PR, Humphreys CJ, Larsen PK, Grzegory I and Porowski S (1999). Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD). Journal of Crystal Growth, Elsevier vol. 204 (4), 419-428.  
      01-08-1999
    • Kaiser U, Brown PD, Khodos I, Humphreys CJ, Schenk HPD and Richter W (1999). The effect of growth condition on the structure of 2H – AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy. Journal of Materials Research, Springer Nature vol. 14 (5), 2036-2042.  
      01-05-1999
    • LIU , BOOTHROYD and HUMPHREYS (1999). Energy‐filtered transmission electron microscopy of multilayers in semiconductors. Journal of Microscopy, Wiley vol. 194 (1), 58-70.  
      01-04-1999
    • LIU , PRESTON , BOOTHROYD and HUMPHREYS (1999). Quantitative analysis of ultrathin doping layers in semiconductors using high‐angle annular dark field images. Journal of Microscopy, Wiley vol. 194 (1), 171-182.  
      01-04-1999
    • Humphreys CJ (1999). A two-phase charge-density real-space-pairing model of high-Tc superconductivity. Acta Crystallographica Section a: Foundations of Crystallography vol. 55 (2 PART I), 228-233.  
      01-03-1999
    • Humphreys CJ (1999). A two‐phase charge‐density real‐space‐pairing model of high‐Tc superconductivity. Acta Crystallographica Section a: Foundations and Advances, International Union of Crystallography (Iucr) vol. 55 (2‐1), 228-233.  
      01-03-1999
    • Walther T and Humphreys CJ (1999). A quantitative study of compositional profiles of chemical vapour-deposited strained silicon–germanium/silicon layers by transmission electron microscopy. Journal of Crystal Growth, Elsevier vol. 197 (1-2), 113-128.  
      01-02-1999
    • Smith JP, Eccleston W, Brown PD and Humphreys CJ (1999). Electronic and Structural Properties of Partially Crystallized Silicon Produced by Solid‐Phase Crystallization of As‐Deposited Amorphous Silicon. Journal of The Electrochemical Society, The Electrochemical Society vol. 146 (1), 306-312.  
      01-01-1999
    • Yonenaga I, Lim S, Shindo D, Brown PD and Humphreys CJ (1999). Structure and Climb of Faulted Dipoles in GaAs. Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 171 (1), 53-57.  
      01-01-1999
    • Chen GS and Humphreys CJ (1999). Study of sample thickness dependence in electron-beam irradiation of self-developing inorganic materials. Journal of Applied Physics, Aip Publishing vol. 85 (1), 148-152.  
      01-01-1999

    1998

    • Lim S-H, Shindo D, Yonenaga I, Brown PD and Humphreys CJ (1998). Atomic Arrangement of a Z-Shape Faulted Dipole within Deformed GaAs. Physical Review Letters, American Physical Society (Aps) vol. 81 (24), 5350-5353.  
      14-12-1998
    • Matsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R and Humphreys CJ (1998). High-Quality Epitaxial MnSi(111) Layers Grown in the Presence of an Sb Flux. Japanese Journal of Applied Physics, Iop Publishing vol. 37 (12R) 
      01-12-1998
    • Ogawa H, Watanabe M, Ohsato H and Humphreys C (1998). Microwave dielectric properties of (Y2-xRx)BaCuO5 (R = rare-earth) solid solutions. Ieee International Symposium On Applications of Ferroelectrics, 517-520.  
      01-12-1998
    • Humphreys C (1998). Stuff of dreams. New Scientist vol. 157 (2126), 44-45.  
      01-12-1998
    • Yonenaga I, Brown PD and Humphreys CJ (1998). Climb of dislocations in GaAs by irradiation. Materials Science and Engineering A, Elsevier vol. 253 (1-2), 148-150.  
      01-09-1998
    • Nishino Y, Inkson BJ, Ogawa T and Humphreys CJ (1998). Effect of molybdenum substitution on phase stability and high-temperature strength of Fe3 Al alloys. Philosophical Magazine Letters, Taylor & Francis vol. 78 (2), 97-103.  
      01-08-1998
    • Chen GS, Boothroyd CB and Humphreys CJ (1998). Electron-beam-induced damage in amorphous SiO2 and the direct fabrication of silicon nanostructures. The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 78 (2), 491-506.  
      01-08-1998
    • Humphreys C (1998). Shaping the future of materials science. Materials World vol. 6 (6), 352-355.  
      01-06-1998
    • Tatsuoka H, Isaji K, Sugiura K, Kuwabara H, Brown PD, Xin Y and Humphreys CJ (1998). Interfacial reaction and defect microstructure of epitaxial MnSb/Si(111) grown by hot-wall epitaxy. Journal of Applied Physics, Aip Publishing vol. 83 (10), 5504-5508.  
      15-05-1998
    • Dudarev SL, Botton GA, Savrasov SY, Humphreys CJ and Sutton AP (1998). Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study. Physical Review B, American Physical Society (Aps) vol. 57 (3), 1505-1509.  
      15-01-1998
    • Pekarskaya E, Humphreys CJ and Jones CN (1998). Comparative Study of the Microstructure and Tensile Properties of Ni-Al Alloys with Fe and Cr Additions. Mrs Advances, Springer Nature vol. 552 
      01-01-1998
    • Humphreys CJ, Botton GA, Pankhurst DA, Keast VJ and Temmerman WM (1998). Electronic Structure, Charge Transfer and Bonding in Intermetallics Using EELS and Density Functional Theory. Mrs Advances, Springer Nature vol. 552 
      01-01-1998
    • Matsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R and Humphreys CJ (1998). High-quality epitaxial MnSi(111) layers grown in the presence of an Sb flux. Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers vol. 37 (12A), 6556-6561.  
      01-01-1998
    • Watanabe M, Ogawa H, Ohsato H and Humphreys C (1998). Microwave dielectric properties of Y2Ba(Cu1-xZnx)O5 solid solutions. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers vol. 37 (9 PART B), 5360-5363.  
      01-01-1998
    • Humphreys C (1998). The Number of People in the Exodus from Egypt: Decoding Mathematically the Very Large Numbers in Numbers I and XXVI. Vetus Testamentum, Brill Academic Publishers vol. 48 (2), 196-213.  
      01-01-1998

    1997

    • Chen GS and Humphreys CJ (1997). Investigation of the proximity effect in amorphous AlF3 electron-beam resists. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 15 (6), 1954-1960.  
      01-11-1997
    • Humphreys C (1997). Book Review: The Economic Laws of Scientific Research, Terence Kealey. Macmillan Press, Basingstoke and London, 1996. £47.50 (hardback). 0-333-56045-0. European Review, Cambridge University Press (Cup) vol. 5 (4), 443-445.  
      01-10-1997

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