Prof Sir Colin Humphreys
CBE, FREng, FRS, BSc, MA, PhD, Hon DSc, FIMMM, FInstP, FCGI, Hon FRMS

 

All Publications

Page 5 of 10

    2009

    • Hall JL, Moram MA, Sanchez A, Novikov SV, Kent AJ, Foxon CT, Humphreys CJ and Campion RP (2009). Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy. Journal of Crystal Growth, Elsevier vol. 311 (7), 2054-2057.  
      01-03-2009
    • Moss DM, Akimov AV, Kent AJ, Glavin BA, Kappers MJ, Hollander JL, Moram MA and Humphreys CJ (2009). Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlattices. Applied Physics Letters, Aip Publishing vol. 94 (1) 
      05-01-2009

    2008

    • Holec D, Zhang Y, Rao DVS, Kappers MJ, McAleese C and Humphreys CJ (2008). Equilibrium critical thickness for misfit dislocations in III-nitrides. Journal of Applied Physics, Aip Publishing vol. 104 (12) 
      15-12-2008
    • Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A (2008). Electrically driven single InGaN/GaN quantum dot emission. Applied Physics Letters, Aip Publishing vol. 93 (23) 
      08-12-2008
    • Moram MA, Barber ZH and Humphreys CJ (2008). The effect of oxygen incorporation in sputtered scandium nitride films. Thin Solid Films, Elsevier vol. 516 (23), 8569-8572.  
      01-10-2008
    • Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ (2008). Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates. Applied Physics Letters, Aip Publishing vol. 93 (10) 
      08-09-2008
    • Oliver RA, Van der Laak NK, Kappers MJ and Humphreys CJ (2008). Insights into the growth mechanism of InxGa1−xN epitaxial nanostructures formed using a silane predose. Journal of Crystal Growth, Elsevier vol. 310 (15), 3459-3465.  
      01-07-2008
    • Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Larson D, Saxey DW and Cerezo A (2008). Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures. Journal of Applied Physics, Aip Publishing vol. 104 (1) 
      01-07-2008
    • Oliver RA, Galtrey MJ and Humphreys CJ (2008). High resolution transmission electron microscopy and three-dimensional atom probe microscopy as complementary techniques for the high spatial resolution analysis of GaN based quantum well systems. Materials Science and Technology, Sage Publications vol. 24 (6), 675-681.  
      01-06-2008
    • Moram MA, Novikov SV, Kent AJ, Nörenberg C, Foxon CT and Humphreys CJ (2008). Growth of epitaxial thin films of scandium nitride on 100-oriented silicon. Journal of Crystal Growth, Elsevier vol. 310 (11), 2746-2750.  
      01-05-2008
    • Moram MA, Vickers ME, Kappers MJ and Humphreys CJ (2008). The effect of wafer curvature on x-ray rocking curves from gallium nitride films. Journal of Applied Physics, Aip Publishing vol. 103 (9) 
      01-05-2008
    • Rossetti M, Smeeton TM, Tan W-S, Kauer M, Hooper SE, Heffernan J, Xiu H and Humphreys CJ (2008). Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings. Applied Physics Letters, Aip Publishing vol. 92 (15) 
      14-04-2008
    • Humphreys CJ (2008). Solid-State Lighting. Mrs Bulletin, Springer Nature vol. 33 (4), 459-470.  
      01-04-2008
    • Hollander JL, Kappers MJ, McAleese C and Humphreys CJ (2008). Improvements in a-plane GaN crystal quality by a two-step growth process. Applied Physics Letters, Aip Publishing vol. 92 (10) 
      10-03-2008
    • Sumner J, Oliver RA, Kappers MJ and Humphreys CJ (2008). Assessment of the performance of scanning capacitance microscopy for n-type gallium nitride. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 26 (2), 611-617.  
      01-03-2008
    • de Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D and Humphreys CJ (2008). Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures (Adv. Mater. 5/2008). Advanced Materials, Wiley vol. 20 (5) 
      29-02-2008
    • de Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D and Humphreys CJ (2008). Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures. Advanced Materials, Wiley vol. 20 (5), 1038-1043.  
      08-02-2008
    • Galtrey MJ, Oliver RA, Kappers MJ, McAleese C, Zhu D, Humphreys CJ, Clifton PH, Larson D and Cerezo A (2008). Compositional inhomogeneity of a high-efficiency InxGa1−xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe. Applied Physics Letters, Aip Publishing vol. 92 (4) 
      28-01-2008
    • Zhao LX, Thrush EJ, Humphreys CJ and Phillips WA (2008). Degradation of GaN-based quantum well light-emitting diodes. Journal of Applied Physics, Aip Publishing vol. 103 (2) 
      15-01-2008
    • Ketteniss N, Oliver RA, McAleese C, Kappers MJ, Zhang Y and Humphreys CJ (2008). The role of strain in controlling the surface morphology of AlxGa1−xN following in situ treatment with SiH4 and NH3. Applied Surface Science, Elsevier vol. 254 (7), 2124-2130.  
      01-01-2008

    2007

    • Cerezo A, Clifton PH, Galtrey MJ, Humphreys CJ, Kelly TF, Larson DJ, Lozano-Perez S, Marquis EA, Oliver RA, Sha G, Thompson K, Zandbergen M and Alvis RL (2007). Atom probe tomography today. Materials Today, Elsevier vol. 10 (12), 36-42.  
      01-12-2007
    • Emiroglu D, Evans-Freeman JH, Kappers MJ, McAleese C and Humphreys CJ (2007). Deep electronic states associated with a metastable hole trap in n-type GaN. Physica B Condensed Matter, Elsevier vol. 401, 311-314.  
      01-12-2007
    • Jarjour AF, Oliver RA, Tahraoui A, Kappers MJ, Humphreys CJ and Taylor RA (2007). Control of the Oscillator Strength of the Exciton in a Single InGaN-GaN Quantum Dot. Physical Review Letters, American Physical Society (Aps) vol. 99 (19) 
      09-11-2007
    • Hylton NP, Dawson P, Kappers MJ, McAleese C and Humphreys CJ (2007). Excitation energy dependence of the photoluminescence spectrum of an InxGa1−xN∕GaN single quantum well structure. Physical Review B, American Physical Society (Aps) vol. 76 (20) 
      05-11-2007
    • Holec D, Costa PMFJ, Cherns PD and Humphreys CJ (2007). Electron energy loss near edge structure (ELNES) spectra of AlN and AlGaN: A theoretical study using the Wien2k and Telnes programs. Micron, Elsevier vol. 39 (6), 690-697.  
      22-10-2007
    • Jiang N, Qiu J, Humphreys CJ and Spence JCH (2007). Observation of long-range compositional fluctuations in glasses: Implications for atomic and electronic structure. Micron, Elsevier vol. 39 (6), 698-702.  
      22-10-2007
    • Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Cerezo A and Smith GDW (2007). Response to “Comment on ‘Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: assessment of possible indium clustering’” [Appl. Phys. Lett. 91, 176101 (2007)]. Applied Physics Letters, Aip Publishing vol. 91 (17) 
      22-10-2007
    • Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2007). Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer. Journal of Crystal Growth vol. 308 (2), 302-308.  
      15-10-2007
    • Moram MA, Zhang Y, Kappers MJ, Barber ZH and Humphreys CJ (2007). Dislocation reduction in gallium nitride films using scandium nitride interlayers. Applied Physics Letters, Aip Publishing vol. 91 (15) 
      08-10-2007
    • Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2007). Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer. Journal of Crystal Growth, Elsevier vol. 308 (2), 302-308.  
      01-10-2007
    • Zhang Y, McAleese C, Xiu H, Humphreys CJ, Lieten RR, Degroote B and Borghs G (2007). Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy. Applied Physics Letters, Aip Publishing vol. 91 (9) 
      27-08-2007
    • Cerezo A, Chang L, Clifton P, Galtrey M, Gerstl S, Humphreys C, Mueller M, Oliver R, Smith G and Wu Y (2007). 3D Atom Probe Analysis of Quantum Well and Quantum Dot Materials. Microscopy and Microanalysis, Oxford University Press (Oup) vol. 13 (S02), 1608-1609.  
      01-08-2007
    • Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A (2007). Cavity-enhanced blue single-photon emission from a single InGaN∕GaN quantum dot. Applied Physics Letters, Aip Publishing vol. 91 (5) 
      30-07-2007
    • Moram MA, Barber ZH and Humphreys CJ (2007). Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction. Journal of Applied Physics, Aip Publishing vol. 102 (2) 
      15-07-2007
    • van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ (2007). Characterization of InGaN quantum wells with gross fluctuations in width. Journal of Applied Physics, Aip Publishing vol. 102 (1) 
      01-07-2007
    • Galtrey M, Oliver R and Humphreys C (2007). Atom probe provides evidence to question InGaN cluster theory. Compound Semiconductor vol. 13 (4), 27-30.  
      01-05-2007
    • Humphreys CJ (2007). Does In form In-rich clusters in InGaN quantum wells? The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 87 (13), 1971-1982.  
      01-05-2007
    • van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ (2007). Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures. Applied Physics Letters, Aip Publishing vol. 90 (12) 
      19-03-2007
    • Founta S, Coraux J, Jalabert D, Bougerol C, Rol F, Mariette H, Renevier H, Daudin B, Oliver RA, Humphreys CJ, Noakes TCQ and Bailey P (2007). Anisotropic strain relaxation in a-plane GaN quantum dots. Journal of Applied Physics, Aip Publishing vol. 101 (6) 
      15-03-2007
    • Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Stokes DJ, Clifton PH and Cerezo A (2007). Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering. Applied Physics Letters, Aip Publishing vol. 90 (6) 
      05-02-2007
    • Fraser IS, Oliver RA, Sumner J, McAleese C, Kappers MJ and Humphreys CJ (2007). Compositional contrast in AlxGa1−xN/GaN heterostructures using scanning spreading resistance microscopy. Applied Surface Science, Elsevier vol. 253 (8), 3937-3944.  
      01-02-2007
    • Graham DM, Dawson P, Chabrol GR, Hylton NP, Zhu D, Kappers MJ, McAleese C and Humphreys CJ (2007). High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm. Journal of Applied Physics, Aip Publishing vol. 101 (3) 
      01-02-2007
    • Chee AKW, Rodenburg C and Humphreys CJ (2007). The Effect of Surface States on Secondary Electron (SE) Dopant Contrast from Silicon p-n Junctions. Mrs Advances, Springer Nature vol. 1026 
      01-01-2007

    2006

    • Ong VKS, Kurniawan O, Moldovan G and Humphreys CJ (2006). A method of accurately determining the positions of the edges of depletion regions in semiconductor junctions. Journal of Applied Physics, Aip Publishing vol. 100 (11) 
      01-12-2006
    • Graham DM, Dawson P, Godfrey MJ, Kappers MJ and Humphreys CJ (2006). Resonant excitation photoluminescence studies of InGaN∕GaN single quantum well structures. Applied Physics Letters, Aip Publishing vol. 89 (21) 
      20-11-2006
    • Moldovan G, Kazemian P, Edwards PR, Ong VKS, Kurniawan O and Humphreys CJ (2006). Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices. Ultramicroscopy, Elsevier vol. 107 (4-5), 382-389.  
      07-11-2006
    • Spence⊥ JCH, Kolar HR, Hembree G, Humphreys CJ, Barnard J, Datta R, Koch C, Ross FM and Justo JF (2006). Imaging dislocation cores – the way forward. The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 86 (29-31), 4781-4796.  
      11-10-2006
    • Moram MA, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2006). Microstructure of epitaxial scandium nitride films grown on silicon. Applied Surface Science, Elsevier vol. 252 (24), 8385-8387.  
      01-10-2006
    • Kazemian P, Mentink SAM, Rodenburg C and Humphreys CJ (2006). High resolution quantitative two-dimensional dopant mapping using energy-filtered secondary electron imaging. Journal of Applied Physics, Aip Publishing vol. 100 (5) 
      01-09-2006
    • Kazemian P, Mentink SAM, Rodenburg C and Humphreys CJ (2006). Quantitative secondary electron energy filtering in a scanning electron microscope and its applications. Ultramicroscopy, Elsevier vol. 107 (2-3), 140-150.  
      26-07-2006

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