Prof Sir Colin Humphreys
CBE, FREng, FRS, BSc, MA, PhD, Hon DSc, FIMMM, FInstP, FCGI, Hon FRMS
All Publications
Page 4 of 10
2011
- Badcock TJ, Kappers MJ, Moram MA, Dawson P and Humphreys CJ (2011). Modification of carrier localization in basal‐plane stacking faults: The effect of Si‐doping in a‐plane GaN. Physica Status Solidi (B), Wiley vol. 249 (3), 498-502.
27-12-2011 - Hao R, Kappers MJ, Moram MA and Humphreys CJ (2011). Defect reduction processes in heteroepitaxial non-polar a-plane GaN films. Journal of Crystal Growth, Elsevier vol. 337 (1), 81-86.
01-12-2011 - Knoll SM, Zhang S, Joyce TB, Kappers MJ, Humphreys CJ and Moram MA (2011). Growth, microstructure and morphology of epitaxial ScGaN films. Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 209 (1), 33-40.
24-11-2011 - Zhu D, McAleese C, Häberlen M, Kappers MJ, Hylton N, Dawson P, Radtke G, Couillard M, Botton GA, Sahonta S and Humphreys CJ (2011). High‐efficiency InGaN/GaN quantum well structures on large area silicon substrates. Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 209 (1), 13-16.
21-11-2011 - Moram MA, Kappers MJ, Massabuau F, Oliver RA and Humphreys CJ (2011). Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys. 109, 073509 (2011)]. Journal of Applied Physics, Aip Publishing vol. 110 (9)
01-11-2011 - Zhang Y, Fu W-Y, Humphreys C and Lieten R (2011). Structural Characterisation of Improved GaN Epilayers Grown on a Ge(111) Substrate. Applied Physics Express, Iop Publishing vol. 4 (9)
26-08-2011 - Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P and Humphreys CJ (2011). The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r -Plane Sapphire Substrates. Japanese Journal of Applied Physics, Iop Publishing vol. 50 (8R)
01-08-2011 - Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P and Humphreys CJ (2011). The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates. Japanese Journal of Applied Physics, Iop Publishing vol. 50 (8R)
01-08-2011 - Bennett SE, Saxey DW, Kappers MJ, Barnard JS, Humphreys CJ, Smith GD and Oliver RA (2011). Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells. Applied Physics Letters, Aip Publishing vol. 99 (2)
11-07-2011 - Fu WY, Kappers MJ, Zhang Y, Humphreys CJ and Moram MA (2011). Dislocation Climb in c-Plane AlN Films. Applied Physics Express, Iop Publishing vol. 4 (6)
01-06-2011 - Badcock TJ, Hao R, Moram MA, Dawson P, Kappers MJ and Humphreys CJ (2011). The effect of indium concentration on the optical properties of a‐plane InGaN/GaN quantum wells grown on r‐plane sapphire substrates. Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 208 (7), 1529-1531.
01-06-2011 - Holec D, Rachbauer R, Kiener D, Cherns PD, Costa PMFJ, McAleese C, Mayrhofer PH and Humphreys CJ (2011). Towards predictive modeling of near-edge structures in electron energy-loss spectra of AlN-based ternary alloys. Physical Review B, American Physical Society (Aps) vol. 83 (16)
15-04-2011 - Moram MA, Kappers MJ, Massabuau F, Oliver RA and Humphreys CJ (2011). The effects of Si doping on dislocation movement and tensile stress in GaN films. Journal of Applied Physics, Aip Publishing vol. 109 (7)
01-04-2011 - Watson-Parris D, Godfrey MJ, Dawson P, Oliver RA, Galtrey MJ, Kappers MJ and Humphreys CJ (2011). Carrier localization mechanisms in InxGa1-xN/GaN quantum wells. Physical Review B, American Physical Society (Aps) vol. 83 (11)
15-03-2011 - Chee AKW, Broom RF, Humphreys CJ and Bosch EGT (2011). A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulations. Journal of Applied Physics, Aip Publishing vol. 109 (1)
01-01-2011 - Zhu D, McAleese C, Häberlen M, Salcianu C, Thrush T, Kappers M, Phillips A, Lane P, Kane M, Wallis D, Martin T, Astles M, Hylton N, Dawson P and Humphreys C (2011). Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates. Journal of Applied Physics, Aip Publishing vol. 109 (1)
01-01-2011
2010
- Moram MA, Sadler TC, Häberlen M, Kappers MJ and Humphreys CJ (2010). Dislocation movement in GaN films. Applied Physics Letters, Aip Publishing vol. 97 (26)
27-12-2010 - Radtke G, Couillard M, Botton GA, Zhu D and Humphreys CJ (2010). Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy. Applied Physics Letters, Aip Publishing vol. 97 (25)
20-12-2010 - Chang TY, Moram MA, McAleese C, Kappers MJ and Humphreys CJ (2010). Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm. Journal of Applied Physics, Aip Publishing vol. 108 (12)
15-12-2010 - Bennett SE, Ulfig RM, Clifton PH, Kappers MJ, Barnard JS, Humphreys CJ and Oliver RA (2010). Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice. Ultramicroscopy, Elsevier vol. 111 (3), 207-211.
01-12-2010 - Hao R, Zhu T, Häberlen M, Chang TY, Kappers MJ, Oliver RA, Humphreys CJ and Moram MA (2010). The effects of annealing on non-polar (112¯0) a-plane GaN films. Journal of Crystal Growth, Elsevier vol. 312 (23), 3536-3543.
01-11-2010 - Schulz S, Badcock TJ, Moram MA, Dawson P, Kappers MJ, Humphreys CJ and O’Reilly EP (2010). Electronic and optical properties of nonpolar a-plane GaN quantum wells. Physical Review B, American Physical Society (Aps) vol. 82 (12)
15-09-2010 - Oliver RA, Bennett SE, Zhu T, Beesley DJ, Kappers MJ, Saxey DW, Cerezo A and Humphreys CJ (2010). Microstructural origins of localization in InGaN quantum wells. Journal of Physics D, Iop Publishing vol. 43 (35)
19-08-2010 - Kurniawan O, Tan CC, Ong VKS, Li E and Humphreys CJ (2010). A Direct Method for Charge Collection Probability Computation Using the Reciprocity Theorem. Ieee Transactions On Electron Devices, Institute of Electrical and Electronics Engineers (Ieee) vol. 57 (10), 2455-2461.
09-08-2010 - Häberlen M, Badcock TJ, Moram MA, Hollander JL, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA (2010). Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. Journal of Applied Physics, Aip Publishing vol. 108 (3)
01-08-2010 - Humphreys C, Oliver R, Kappers M, Bennett , Parris D, Dawson P, Godfrey M, Clifton P, Larson D, Ulfig R, Saxey D and Cerezo A (2010). Looking Inside the Fascinating Nanoworld Controlling Light Emission from InGaN/GaN Quantum Well Devices. Microscopy and Microanalysis, Oxford University Press (Oup) vol. 16 (S2), 1890-1891.
01-07-2010 - Bennett SE, Holec D, Kappers MJ, Humphreys CJ and Oliver RA (2010). Imaging dislocations in gallium nitride across broad areas using atomic force microscopy. Review of Scientific Instruments, Aip Publishing vol. 81 (6)
01-06-2010 - Jiang B, Zuo JM, Holec D, Humphreys CJ, Spackman M and Spence JCH (2010). Combined structure‐factor phase measurement and theoretical calculations for mapping of chemical bonds in GaN. Acta Crystallographica Section a: Foundations and Advances, International Union of Crystallography (Iucr) vol. 66 (4), 446-450.
07-05-2010 - Ashraf H, Rao DVS, Gogova D, Siche D, Fornari R, Humphreys CJ and Hageman PR (2010). Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment. Journal of Crystal Growth, Elsevier vol. 312 (4), 595-600.
01-02-2010 - Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2010). Measuring dislocation densities in nonpolar a-plane GaN films using atomic force microscopy. Journal of Physics D, Iop Publishing vol. 43 (5)
21-01-2010 - Kappers MJ, Moram MA, Rao DVS, McAleese C and Humphreys CJ (2010). Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire. Journal of Crystal Growth, Elsevier vol. 312 (3), 363-367.
01-01-2010
2009
- Taylor RA, Jarjour AF, Collins DP, Holmes MJ, Oliver RA, Kappers MJ and Humphreys CJ (2009). Cavity Enhancement of Single Quantum Dot Emission in the Blue. Discover Nano, Springer Nature vol. 5 (3)
27-12-2009 - Moram MA, Zhang Y, Joyce TB, Holec D, Chalker PR, Mayrhofer PH, Kappers MJ and Humphreys CJ (2009). Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy. Journal of Applied Physics, Aip Publishing vol. 106 (11)
01-12-2009 - Sumner J, Oliver RA, Kappers MJ and Humphreys CJ (2009). Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN. Journal of Applied Physics, Aip Publishing vol. 106 (10)
15-11-2009 - Moram MA, Oliver RA, Kappers MJ and Humphreys CJ (2009). The Spatial Distribution of Threading Dislocations in Gallium Nitride Films. Advanced Materials, Wiley vol. 21 (38‐39), 3941-3944.
16-10-2009 - Charash R, Maaskant PP, Lewis L, McAleese C, Kappers MJ, Humphreys CJ and Corbett B (2009). Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes. Applied Physics Letters, Aip Publishing vol. 95 (15)
12-10-2009 - Moram MA, Ghedia CS, Rao DVS, Barnard JS, Zhang Y, Kappers MJ and Humphreys CJ (2009). On the origin of threading dislocations in GaN films. Journal of Applied Physics, Aip Publishing vol. 106 (7)
01-10-2009 - Oliver RA, Sumner J, Kappers MJ and Humphreys CJ (2009). Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images. Journal of Applied Physics, Aip Publishing vol. 106 (5)
01-09-2009 - Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2009). Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction. Physica B Condensed Matter, Elsevier vol. 404 (16), 2189-2191.
01-08-2009 - Hertkorn J, Thapa SB, Wunderer T, Scholz F, Wu ZH, Wei QY, Ponce FA, Moram MA, Humphreys CJ, Vierheilig C and Schwarz UT (2009). Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, Aip Publishing vol. 106 (1)
01-07-2009 - Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2009). The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films. Journal of Physics D, Iop Publishing vol. 42 (13)
16-06-2009 - Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ (2009). Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates. Journal of Applied Physics, Aip Publishing vol. 105 (12)
15-06-2009 - Rao DVS, McLaughlin K, Kappers MJ and Humphreys CJ (2009). Lattice distortions in GaN on sapphire using the CBED–HOLZ technique. Ultramicroscopy, Elsevier vol. 109 (10), 1250-1255.
12-06-2009 - Johnston CF, Kappers MJ, Moram MA, Hollander JL and Humphreys CJ (2009). Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire. Journal of Crystal Growth, Elsevier vol. 311 (12), 3295-3299.
01-06-2009 - Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2009). Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers. Journal of Crystal Growth, Elsevier vol. 311 (12), 3239-3242.
01-06-2009 - Moram MA, Johnston CF, Hollander JL, Kappers MJ and Humphreys CJ (2009). Understanding x-ray diffraction of nonpolar gallium nitride films. Journal of Applied Physics, Aip Publishing vol. 105 (11)
01-06-2009 - Collins D, Jarjour A, Hadjipanayi M, Taylor R, Oliver R, Kappers M, Humphreys C and Tahraoui A (2009). Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot. Nanotechnology, Iop Publishing vol. 20 (24)
27-05-2009 - Johnston CF, Moram MA, Kappers MJ and Humphreys CJ (2009). Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayers. Applied Physics Letters, Aip Publishing vol. 94 (16)
20-04-2009 - Johnston CF, Kappers MJ and Humphreys CJ (2009). Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method. Journal of Applied Physics, Aip Publishing vol. 105 (7)
01-04-2009 - Holec D, Rao DVS and Humphreys CJ (2009). HANSIS software tool for the automated analysis of HOLZ lines. Ultramicroscopy, Elsevier vol. 109 (7), 837-844.
24-03-2009